?2000 fairchild semiconductor international rev. a, february 2000 ksd2012 npn epitaxial silicon transistor absolute maximum ratings t c =25 c unless otherwise noted electrical characteristics t c =25 c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current 3 a i b base current 0.3 a p c collector power dissipation (t c =25 c) 25 w t j junction temperature 150 c t stg storage temperature - 55 ~ 150 c symbol parameter test condition min. typ. max. units bv ceo collector-emitter breakdown voltage i c = 50ma, i b = 0 60 v i cbo collector cut-off current v cb = 60v, i e = 0 100 a i ebo emitter cut-off current v eb = 7v, i c = 0 10 a h fe1 h fe2 dc current gain v ce = 5v, i c = 0.5a v ce = 5v, i c = 3a 100 20 320 v ce (sat) collector-emitter saturation voltage i c = 2a, i b = 0.2a 0.4 1 v v be (on) base-emitter on voltage v ce = 5v, i c = 0.5a 0.7 1 v f t current gain bandwidth product v ce = 5v, i c = 0.5a 3 mhz classification y g h fe1 100 ~ 200 150 ~ 320 ksd2012 low frequency power amplifier complement to ksb1366 1 1.base 2.collector 3.emitter to-220f
?2000 fairchild semiconductor international ksd2012 rev. a, february 2000 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. safe operating area figure 6. power derating 012345678 0 1 2 3 4 i b = 50ma i b = 60ma i b = 40ma i b = 70ma i b = 30ma i b = 90ma i b = 20ma i b = 80ma i b = 10ma i b = 0ma ic[a], collector current v ce [v], collector-emitter voltage 0.01 0.1 1 10 1 10 100 1000 v ce = 5v h fe , dc current gain i c [a], collector current 0.001 0.1 1 10 0.01 0.1 1 10 ic = 10 i b v ce (sat)[v], saturation voltage i c [a], collector current 0.4 0.8 1.2 1.6 0 1 2 3 4 v ce = 5v i c [a], collector current v be [v], base-emitter voltage 1 10 100 0.1 1 10 v ceo max 100ms 1s 1ms 10ms dc i c max(pulse) i c (max) i c [a], collector current v ce [v], collector-emitter voltage 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 p c [w], power dissipation t c [ o c], case temperature
(7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f package demensions ?2000 fairchild semiconductor international rev. a, february 2000 ksd2012 dimensions in millimeters
?2000 fairchild semiconductor international rev. e trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex? bottomless? coolfet? crossvolt? e 2 cmos? fact? fact quiet series? fast ? fastr? gto? hisec? isoplanar? microwire? pop? powertrench ? qfet? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? vcx? disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging ksd2012 npn epitaxial silicon transistor features back to top applications back to top contents ? features ? applications ? product status/pricing/packaging ? order samples ? qualification support low frequency power amplifier z complement to ksb1366 low fre q uenc y powe r am p lifie r datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** KSD2012GTU full production $0.253 to - 220f 3 rail line 1: $y (fairchild logo) line 2: d2012-g line 3: &3 ksd2012ytu full production $0.255 to - 220f 3 rail line 1: $y (fairchild logo) line 2: d2012-y line 3: &3 related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairch ild p/n ksd2012 - npn e p itaxial silicon transisto r 18-au g -2007 mhtml:file://c:\ temp\KSD2012GTU.mht
back to top qualification support click on a product for detailed qualification data back to top ksd2012yydtu full production $0.275 to - 220f 3 rail line 1: $y (fairchild logo) line 2: d2012-y line 3: &3 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributor to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product ksd2012 is available. click here for more information . product KSD2012GTU ksd2012ytu ksd2012yydtu ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairch ild p/n ksd2012 - npn e p itaxial silicon transisto r 18-au g -2007 mhtml:file://c:\ temp\KSD2012GTU.mht
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